The influence of Büttiker probe scattering to the port behavior of nanoscale metal–oxide–semiconductor devices

SUMMARY

This paper presents a discussion of the impact of Büttiker probe scattering on the port behavior of nanoscaled metal–oxide–semiconductor devices. The simulation of the carrier transport property is based on the nonequilibrium Green's function formalisms, and scattering effects are implemented in the model through Büttiker probes. For reducing the computational burden, a simplified model for modeling the scattering effects with only one Büttiker probe is proposed and gives reasonable results for studying the port behaviors of nanoscaled metal–oxide–semiconductor devices. Copyright © 2012 John Wiley & Sons, Ltd.

We study the changing of the port behavior of an ultra-thin double-gate metal–oxide–semiconductor field-effect transistor due to scattering effects in the transport channel. Starting from a ballistic transport model based on nonequilibrium Green's function formalisms, the scattering effects are implemented by employing the Büttiker probes (BP). A relation of scattering strengths of the 1-BP and N-BP models is found. Furthermore, we show that the simulation results of a modified 1-BP model are in good agreement with the N-BP model in the saturation domain where a substantial speed-up of about 150 can be observed.